GHXS100B120S-D3
DIODE MOD SIC 1200V 198A SOT227Manufacturer: SemiQ
Categories: Diode Arrays
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SemiQ GHXS100B120S-D3 is a Silicon Carbide (SiC) Schottky Diode Module. This component features two independent diode configurations within a SOT-227-4, miniBLOC package, designed for chassis mounting. Each diode offers a maximum DC reverse voltage of 1200 V and an average rectified current handling capability of 198 A (DC). The forward voltage drop (Vf) is rated at a maximum of 1.7 V at 100 A. This device exhibits a low reverse leakage current of 200 µA at 1200 V and a negligible reverse recovery time, with no recovery time specified above 500 mA. Operating junction temperatures range from -55°C to 175°C. This module is commonly utilized in high-power applications such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 198A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 100 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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